ALD Memristors for Neuromorphic Computing

Metal-Insulator-Metal structures have been demonstrated to be good candidates for the realization of memristive devices, which have sub-ns operation speeds, low power consumption, good endurance and high scalability.

The activity focus on the fabrication of thin film (nm scale) structures by Atomic Layer Deposition in crossbar geometry and on the electrical characterization of these devices. The main goal of the electrical characterization is the fine control of the resistance value for neuromorphic functionalities. The modulation of resistance value by consecutive voltage pulses emulates the potentiation and depression in neurons connections typical of synapses, opening the way to the engineering of artificial neural network and brain-inspired computing technologies.