Nanoscale Characterization of Resistive Switching Mechanisms

Resistive switching phenomena relying on filamentary conduction imply confined volumes of some tens of nm³ where ionic motion leads to conductance changes. In order to investigate such volumes, a number of characterizations are available, with Conductive Atomic Force Microscopy (C-AFM) standing out as a viable way to get insight about confined conduction. Thanks to the sharp, conductive, probing tip, by C-AFM different kinds of nanostructured materials, ranging from thin films to single isolated nanowires, can be characterized highlighting their typical resistive switching mechanisms.