Resistive Switching in Nanostructured Materials

The research activity focuses on the investigation of memristive effects in nanostructured materials that represent a unique platform for studying resistive switching phenomena at the nanoscale. Currently, the main activity deals with the investigation of the physical mechanism of switching and neuromorphic functionalities in self-assembled ZnO nanowires. Single isolated nanowires and nanowire arrays open the way to explore new features of memristive behavior arising from surface effects and high spatial localization of the switching events, resulting to be promising building blocks for next-generation nanoelectronics.